Open AccessCMOS/IPD switchable bandpass circuit for 28/39 GHz fifth‐generation applications
Author(s) -
Wang Sen,
Cho KangFu
Publication year - 2016
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2015.0806
Subject(s) - band pass filter , cmos , electronic engineering , electrical engineering , optoelectronics , materials science , computer science , engineering
This study presents a switchable bandpass circuit using a standard 0.18 μm complementary metal‐oxide semiconductor (CMOS) and an integrated passive device (IPD) technology for fifth‐generation (5G) mobile communications. The circuit consists of two IPD bandpass filters (BPFs) and one CMOS single‐pole‐double‐throw switch for the 28 or 39 GHz bands. The broadband switch uses a body‐float resistor to improve its insertion loss and power‐handling capability. Moreover, the two rectangular ring BPFs not only achieve low losses but also feature good out‐of‐band rejections. The CMOS chip is then packaged on the IPD substrate with a footprint area of 5.4 mm 2 . The switchable filter results in 4.5/4.7 dB insertion loss, better than 35/30.1 dB isolation, and 18.5/17 dBm input P 1 dB .