Open AccessComplementary metal–oxide–semiconductor 60 GHz power amplifier by in‐phase power combining and digitally assisted power back‐off efficiency enhancement
Author(s) -
Li Nan,
Hao Yu,
Liang Yuan,
Fei Wei,
Li Xiuping,
Liu Xiong
Publication year - 2016
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2015.0182
Subject(s) - amplifier , power (physics) , materials science , electrical engineering , optoelectronics , electronic engineering , semiconductor , engineering , cmos , physics , quantum mechanics
A two‐dimensional in‐phase power combining with digitally assisted self‐tuning is demonstrated in this study for complementary metal–oxide–semiconductor (CMOS) 60 GHz power amplifier (PA) to improve power efficiency. One digitally assisted 4‐way power‐combined PA prototype was implemented in 65‐nm CMOS process. The performance of measured results show output power of 17.2 dBm, power added efficiency of 11.3% with 1.2 V supply voltage, and up to 170–190% efficiency improvement during power back‐off for the entire 7 GHz band at 60 GHz.