Open AccessHighly reliable 10‐W X/Ku‐band pHEMT monolithic microwave integrated circuit power amplifier
Author(s) -
Frounchi Milad,
Mohammadi Elham,
Medi Ali
Publication year - 2016
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2015.0134
Subject(s) - high electron mobility transistor , amplifier , microwave , monolithic microwave integrated circuit , ku band , materials science , integrated circuit , power (physics) , electrical engineering , optoelectronics , engineering , physics , telecommunications , transistor , cmos , voltage , quantum mechanics
In this study, a reliable 10 W high‐power amplifier (HPA) is presented along with its design procedure. Implemented on a 0.25‐μm InGaAs/AlGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) process, the designed HPA achieves power added efficiency (PAE) of more than 33% across the 7.8–12.8 GHz band. The proposed two‐stage PA provides 15 dB large signal gain with an average small‐signal gain of 18 dB. Peak results are achieved at 12.2 GHz with 40.8 dBm output power and 44% PAE. The reliability of the designed HPA is studied in detail along with a thorough discussion of related concerns.