Open AccessA 0.6 V, low‐power and high‐gain ultra‐wideband low‐noise amplifier with forward‐body‐bias technique for low‐voltage operations
Author(s) -
Pandey Sunil,
Singh Jawar
Publication year - 2015
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2014.0581
Subject(s) - wideband , low noise amplifier , noise figure , amplifier , transconductance , electrical engineering , power gain , common gate , ultra wideband , electronic engineering , materials science , voltage , optoelectronics , cmos , engineering , transistor
A two‐stage common‐source (CS) low‐noise amplifier (LNA) that uses a forward‐body‐bias technique in N‐type metal–oxide semiconductor devices and intended to achieve a high gain and low power consumption is proposed in this study for ultra‐wideband (UWB) applications. Its first stage yields an exceptionally high gain because of high transconductance ( g m 1 = 16 mS) of the input device. It also shows simultaneous wideband input matching and low‐noise figure (NF) characteristics with the aid of source degenerated inductors. A simple source degenerated CS topology with the shunt‐peaking inductor L d2 is designed as the second stage to enhance the gain response at high frequencies. Using a standard 90 nm complementary metal–oxide semiconductor process, the proposed UWB LNA achieves a gain S 21 ≥ 20 dB in the frequency range of 3.1–10.6 GHz, while consuming only 12.6 mW power from a 0.6 V supply voltage. The simulation results show a minimum NF (NF min ) below 1.7 dB in the frequency range of 3.1–10.6 GHz and input return loss S 11 < −10 dB in the frequency range of 3.5–10 GHz. When a two tone test is performed with a frequency spacing of 2 MHz, a high value of third‐order input intercept point of −8 dBm is also achieved.