Open AccessActive cold load MMICs for Ka‐, V‐, and W‐bands
Author(s) -
Kantanen Mikko,
Weissbrodt Ernst,
Varis Jussi,
Leuther Arnulf,
SeelmannEggebert Matthias,
Rösch Markus,
Schlecthweg Michael,
Poutanen Torsti,
Sundberg Iiro,
Kaisti Matti,
Altti Miikka,
Jukkala Petri,
Piironen Petri
Publication year - 2015
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2014.0243
Subject(s) - ka band , w band , electrical engineering , monolithic microwave integrated circuit , telecommunications , engineering , amplifier , cmos
Three active cold load circuits operating at millimetre‐wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On‐wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than −19 dB for all designs.