Open AccessDesign of injection‐locked oscillator circuits using an HBT X‐parameters™‐based model
Author(s) -
RodríguezTestera Alejandro,
PelaezPerez Ana,
FernandezBarciela Monica,
Tasker Paul J
Publication year - 2015
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2014.0118
Subject(s) - heterojunction bipolar transistor , electronic circuit , vackář oscillator , injection locking , electrical impedance , electronic engineering , power (physics) , bipolar junction transistor , local oscillator , materials science , control theory (sociology) , transistor , electrical engineering , computer science , engineering , physics , phase noise , voltage , laser , optics , control (management) , quantum mechanics , artificial intelligence
A load independent X‐parameters‐based heterojunction bipolar transistor (HBT) model has been used for the first time in the design and behaviour prediction of injection‐locked oscillator circuits. This model has been extracted from load‐pull measurements with a large‐signal network analyser and, in order to obtain a high oscillator RF power, targeting a load impedance close to the optimum one for HBT maximum output power. A methodology is given to obtain robust injection‐locked oscillator circuits with a high‐synchronisation bandwidth. Several injection‐locked oscillator prototypes have been designed and fabricated, and their measurements compared with the simulations obtained using the X‐parameters model. Satisfactory results were obtained when the prototypes were operated as free‐running and synchronised oscillators.