Open AccessWideband analytical extraction technique of π‐equivalent circuit model for Si/SiGe heterojunction bipolar transistor in BICMOS process
Author(s) -
Taher Hany
Publication year - 2014
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2013.0321
Subject(s) - bipolar junction transistor , equivalent circuit , transistor , electronic engineering , bicmos , heterostructure emitter bipolar transistor , materials science , heterojunction , silicon germanium , topology (electrical circuits) , transistor model , small signal model , wideband , optoelectronics , heterojunction bipolar transistor , computer science , silicon , electrical engineering , engineering , voltage
A developed analytical extraction technique of small‐signal π‐topology equivalent circuit model for Si/SiGe heterojunction bipolar transistor is presented. The intrinsic model parameters, including base resistance ( R b ) which are difficult to extract in the previous works, are analytically extracted by utilising a novel set of exact equations that do not need any numerical fitting, special polarisation of the device or any kind of post processing. Moreover, the substrate effect and the distributed base‐collector junction are accurately modelled and extracted. To the authors knowledge, the extracted values using the presented methodology exhibit flattest and widest frequency independent behaviour among all those extracted with earlier published analytical techniques, especially for base resistance. Excellent agreement is noted between the S ‐parameters measurements and their simulated counterpart using the extracted model in the frequency range from 40 MHz–40 GHz at different bias conditions.