Complementary metal‐oxide semiconductor Doherty power amplifier based on voltage combining method | Zendy

Zhao Chenxi | Zendy; Park Byungjoon | Zendy; Kim Bumman | Zendy

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Complementary metal‐oxide semiconductor Doherty power amplifier based on voltage combining method

Author(s) -

Zhao Chenxi,

Park Byungjoon,

Kim Bumman

Publication year - 2014

Publication title -

iet microwaves, antennas and propagation

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.555

H-Index - 69

eISSN - 1751-8733

pISSN - 1751-8725

DOI - 10.1049/iet-map.2013.0241

Subject(s) - amplifier , materials science , voltage , semiconductor , power (physics) , oxide , electrical engineering , electronic engineering , optoelectronics , engineering , physics , cmos , metallurgy , quantum mechanics

A 1.75 GHz Doherty power amplifier (PA) is designed and implemented in a 0.18‐µm complementary metal‐oxide semiconductor (CMOS) process. This Doherty PA uses a voltage combining transformer to combine the output power and realise the load modulation which is different from conventional current combining Doherty amplifiers. The prototype has a power‐added efficiency (PAE) of 31.6% at a maximum output power of 28.6 dBm from 3.4 V supply voltage. The PAE at 6 dB back‐off is still high, about 25%. It shows clearly the efficiency enhancement at the power back‐off point because of the Doherty operation. This is the first use of voltage combining techniques in CMOS Doherty PA design.

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