Open AccessAnalysis on in‐band distortion caused by switching amplifiers
Author(s) -
Jang Wonhoon,
Silva Nelson,
Oliveira Arnaldo,
Carvalho Nuno Borges
Publication year - 2014
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2013.0096
Subject(s) - amplifier , distortion (music) , electronic engineering , transistor array , matlab , computer science , engineering , electrical engineering , physics , cmos , operating system
A hypothetical model is built to explain an in‐band distortion mechanism of the class F amplifier. Using the model it is analytically proved that static non‐linearities of switching amplifiers do not cause meaningful in‐band distortion when the amplifiers are driven by ideal 1‐bit digital RF signals. It is also found that short‐term memory effects significantly contribute to in‐band distortion. The analysis and the mechanism are tested and supported by MATLAB simulations. A system composed of a field‐programmable gate array and a class F amplifier has been built and the in‐band distortion mechanism is verified by measurement.