Open AccessDesign of high‐efficiency SiGe hetrojunction bipolar transistor linear power amplifier with new adaptive bias configuration
Author(s) -
Huang ChienChang,
Lin WuChieh
Publication year - 2013
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/iet-map.2012.0419
Subject(s) - heterojunction bipolar transistor , dbm , amplifier , power added efficiency , power (physics) , transistor , bipolar junction transistor , electrical engineering , biasing , rf power amplifier , materials science , linear amplifier , power semiconductor device , electronic engineering , optoelectronics , cmos , engineering , voltage , physics , quantum mechanics
This study shows a 2.4 GHz linear power amplifier (PA) design with a new adaptive bias configuration using TSMC 0.35 μm SiGe hetrojunction bipolar transistor (HBT) technology, for wireless communication applications such as WLAN. The proposed bias configuration adequately compromises the consumed current and the output power to avoid dramatic current increases in the high‐input power condition, while the output power capability is also maintained to achieve optimal efficiency through a proper size selection for the bias HBT. The final designed PA displays P 1 dB of 23.76 dBm and 29.76% power‐added‐efficiency (PAE) with a 33.1 dBm output‐intercept‐point in the third order (OIP3). The saturated output power is 27.54 dBm with 39.12% in PAE, while the chip size is 0.91 × 0.83 mm 2 .