Open AccessImproved reverse recovery characteristics obtained in 4H‐SiC double‐trench superjunction MOSFET with an integrated p‐type Schottky diode
Author(s) -
Kotamraju Siva,
Vudumula Pavan
Publication year - 2020
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2020.0315
Subject(s) - schottky diode , materials science , trench , mosfet , optoelectronics , schottky barrier , jfet , diode , transistor , silicon carbide , electrical engineering , field effect transistor , voltage , engineering , nanotechnology , layer (electronics) , metallurgy
A novel double‐trench superjunction SiC metal–oxide–semiconductor field‐effect transistor (MOSFET) with an integrated Schottky contact at the drain side is proposed in this study. Results indicate an improvement of 58% in reverse recovery currentI rrm/chargeQ rrand 22% in the trench corner electric fieldE ox − mcompared to the device without Schottky and without superjunction, respectively. This comparison became possible using mixed mode simulations in Sentaurus TCAD. While the improvement in electric field is due to incorporation of superjunction concept along the drift region, the improvement of reverse recovery is due to Schottky contact forming a barrier for the charge carriers. Using calibrated two‐dimensional numerical simulations, the authors were able to demonstrate the influence of Schottky contact on reverse recovery current of the device. The superiority of the proposed device is presented by plotting the switching energy loss with respect to external gate resistance and temperature through non‐isothermal simulations.