Open AccessMetal controlled nanoscaled dopingless MOSFET on selective/partial buried oxide
Author(s) -
Bashir Faisal,
Murshid Asim M.,
Loan Sajad A.
Publication year - 2020
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2020.0273
Subject(s) - mosfet , materials science , transconductance , field effect transistor , optoelectronics , doping , transistor , electrical engineering , engineering , voltage
In this work, the authors demonstrate the realisation of metal controlled (MC) dopingless (DL) metal oxide semiconductor field‐effect transistor (MOSFET) on a selective buried oxide (SELBOX). The different doped regions of the proposed device, such as source/drain and metal partial ground plane, have been realised with different metal work functions and the device is being named as MC‐DL‐SELBOX‐MOSFET. A 2D simulation studies have shown MC‐DL‐SELBOX‐MOSFET can outperform the conventionally doped SELBOX‐MOSFET (D‐SELBOX‐MOSFET) in terms of short channel performance comparison. The severity of short channel effects is significantly less in MC‐DL‐SELBOX‐MOSFET than D‐SELBOX‐MOSFET and most importantly the proposed device can be scaled below 10 nm without degrading the performance. Further, the ac analysis has shown that transconductance and cut‐off frequency of the MC‐DL‐SELBOX‐MOSFET are higher than D‐SELBOX‐MOSFET. Besides this, MC‐DL‐SELBOX‐MOSFET is unhampered from the doping‐related complications and can be processed at low temperatures.