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Analysis of black phosphorus double gate MOSFET using hybrid method for analogue/RF application
Author(s) -
Rathinam Ramesh,
Pon Adhithan,
Carmel Santhia,
Bhattacharyya Arkaprava
Publication year - 2020
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2020.0092
Subject(s) - transconductance , phosphorene , mosfet , oscillation (cell signaling) , zigzag , ballistic conduction , computational physics , ballistic limit , optoelectronics , physics , electron mobility , technology cad , transistor , materials science , band gap , electronic engineering , electron , quantum mechanics , chemistry , engineering , mathematics , voltage , cad , biochemistry , geometry , projectile
In this work, the authors study the performance of black phosphorus double gate MOSFET (BP‐DGMOSFET) within the ballistic limit. A hybrid simulation technique involving both atomistic and technology computer‐aided design (TCAD) tool has been used for the first time to simulate the device characteristics. First, the density functional theory has been used to simulate the electrical characteristics of single and fewlayer (five layers) phosphorene (including armchair and zigzag directions). The parameters such as bandgap and effective mass obtained using an atomistic simulator tool are exported into Sentaurus TCAD to simulate the BP‐DGMOSFET characteristics. They have used the kinetic velocity model and quantum model to account for the ballistic mobility and quantum effects in the device. The current drain characteristics are calibrated with non‐equilibrium Greens function (NEGF) simulation and radio frequency (RF) characteristics with compact model values and found that their results agree with them. Secondly, the other RF figure of merits, such as maximum frequency of oscillation, transconductance, output conductance and stability has also been simulated. It is found that their proposed method shows results comparable to NEGF with reduced computation time and complexity.

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