Open AccessNumerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications
Author(s) -
Tripathi Pranav M.,
Soni Harshit,
Chaujar Rishu,
Kumar Ajay
Publication year - 2020
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2020.0041
Subject(s) - mosfet , materials science , optoelectronics , short channel effect , threshold voltage , gallium nitride , transistor , electrical engineering , voltage , engineering , nanotechnology , layer (electronics)
This study presents numerical simulation of a novel gallium nitride buffered trench gate (GaN‐BTG) metal oxide semiconductor field effect transistor (MOSFET) for high‐speed and low‐power applications. The electrical characteristics of GaN‐BTG‐MOSFET are compared with BTG MOSFET and conventional trench gate MOSFET. A comparative study of different performance factors such as electric field, electron velocity, threshold voltage ( V th ), electron mobility, and sub‐threshold swing (SS) of these devices has been performed. Results reveal a 43.85% improvement in SS and 9.83% decrement in V th for GaN‐BTG‐MOSFET. Furthermore, the frequency analysis has been performed in terms of scattering ( S ) parameters, cut‐off frequency ( f T ) and maximum oscillator frequency ( f MAX ) to show how the device is also suitable for radio frequency applications. Furthermore, the study of parametric variation of GaN‐BTG‐MOSFET with the change in channel length, oxide thickness ( t ox ), and doping concentration has also been presented. Results show that GaN‐BTG‐MOSFET can act as a promising structure for further scaling down of the trenched MOSFET and assures better performance for sub‐20 nm trenched MOSFET.