Open AccessSingle and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study
Author(s) -
Panda Deepak Kumar,
Singh Rajan,
Lenka Trupti Ranjan,
Pham Thi Tan,
Velpula Ravi Teja,
Jain Barsha,
Bui Ha Quoc Thang,
Nguyen Hieu Pham Trung
Publication year - 2020
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2020.0015
Subject(s) - high electron mobility transistor , materials science , cascode , optoelectronics , amplifier , transistor , large signal model , noise (video) , electrical engineering , cmos , computer science , physics , engineering , voltage , power (physics) , artificial intelligence , image (mathematics) , quantum mechanics
In this study, a 60nm gate length double‐gate AlGaN/GaN/AlGaN metal‐oxide‐semiconductor high‐electron‐mobility transistor (MOS‐HEMT) is proposed and different electrical characteristics, such as DC, small‐signal, radio‐frequency (RF) and high‐frequency noise performances of the devices are characterised through TCAD device simulations. The results of double‐gate MOS‐HEMT are compared with the TCAD simulation results as well as with available experimental data of single‐gate AlGaN/GaN MOS‐HEMT having a similar gate length available from the literature. It is observed that the double‐gate AlGaN/GaN/AlGaN MOS‐HEMT shows good sub‐threshold slope, improved ON current, short‐channel effect immunity, improved RF and noise performance. A look‐up table‐based Verilog‐A model is developed for both devices and the models are incorporated into the Cadence EDA tool to utilise the proposed device in circuit simulations. The Verilog‐A model is applied to design a 1–20GHz wideband feedback cascode low‐noise amplifier (LNA). Performance variability of LNA due to single‐ and double‐gate MOS‐HEMT is also investigated.