Open Access11 Gb/s 140 GHz OOK modulator with 24.6 dB isolation utilising cascaded switch and amplifier‐based stages in 65 nm bulk CMOS
Author(s) -
Yamazaki Daisuke,
Otsuki Yoshitaka,
Hara Takafumi,
Khanh Nguyen Ngoc Mai,
Iizuka Tetsuya
Publication year - 2020
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2019.0377
Subject(s) - keying , cmos , amplifier , modulation (music) , optoelectronics , materials science , on off keying , waveform , electrical engineering , electronic engineering , physics , engineering , quadrature amplitude modulation , channel (broadcasting) , voltage , bit error rate , acoustics
This study presents a complementary metal–oxide–semiconductor (CMOS) 140 GHz on–off‐keying (OOK) modulator with high isolation and low ON‐state insertion loss based on a cascaded architecture of a switch‐based and amplifier‐based modulators. A prototype implemented in a 65 nm bulk CMOS process operates at 140 GHz carrier input and realises 24.6 dB isolation, whereas in ON‐state it achieves 0.3 dB gain and −0.2 dBm OP1 dB with 8 mW power consumption. Up to 11 Gb/s modulation is verified with the spectrum and demodulated waveform measurements. The proposed OOK modulator occupies the core area of 250×380 μm 2 .