Open AccessDesign and analysis of high k silicon nanotube tunnel FET device
Author(s) -
Singh Avtar,
Chaudhury Saurabh,
Kumar Pandey Chandan,
Madhulika Sharma Savitesh,
Kumar Sarkar Chandan
Publication year - 2019
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2019.0230
Subject(s) - quantum tunnelling , materials science , dielectric , silicon , gate dielectric , field effect transistor , optoelectronics , transistor , doping , nanotube , channel (broadcasting) , electrical engineering , nanotechnology , engineering , carbon nanotube , voltage
A new tubular field effect transistor (FET) device named silicon nanotube tunnel field effect transistor (Si‐NTTFET) has been proposed which is emerged out of structural engineering and the gate dielectric engineering. The proposed structure offers better immunity towards short channel effects (SCEs) because of the combined effect of minimal doping at the drain side and control of channel region due to the double gate. The tunnelling probability is also improved due to narrow energy band variation. The high k dielectric material such as Hf O 2 enhances the ON current by a factor of 3 and 14 as compared to S i 3 N 4 and Si O 2 gate dielectric, respectively.