Open Access225 GHz triple‐push RTD oscillator with 0.5 mW dc‐power consumption
Author(s) -
Lee Jooseok,
Kim Maengkyu,
Park Jaehong,
Lee Jongwon
Publication year - 2020
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2019.0228
Subject(s) - electrical engineering , resonant tunneling diode , microwave , quantum tunnelling , diode , indium phosphide , power consumption , voltage , optoelectronics , materials science , power (physics) , physics , topology (electrical circuits) , engineering , telecommunications , gallium arsenide , optics , laser , quantum well , quantum mechanics
This study reports on a sub‐mW triple‐push oscillator using resonant tunnelling diodes (RTDs) operating at a frequency of 225 GHz. The triple‐push RTD oscillator is designed based on a stability test using even/odd‐mode equivalent circuit models and fabricated by using an indium phosphide monolithic microwave integrated circuit process. The fabricated IC exhibits an extremely low dc‐power consumption ( P DC ) of 0.5 mW with a dc‐to‐radio‐frequency efficiency of 1%. These results are attributed to both device characteristics of the RTDs with a low bias voltage of 0.4 V and a low peak current density of 0.74 mA/μm 2 and an efficient triple‐push topology exploiting the strong odd symmetry of the RTD I – V curve with a wide negative differential conductance voltage span of 0.46 V.