
Analytical modelling and parameters extraction of multilayered OLED
Author(s) -
Negi Shubham,
Mittal Poornima,
Kumar Brijesh
Publication year - 2019
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2019.0164
Subject(s) - oled , optoelectronics , materials science , electric field , luminescence , electron mobility , diode , current density , electron , electroluminescence , computational physics , layer (electronics) , physics , nanotechnology , quantum mechanics
This research study investigates electrical performance of the multilayered organic light‐emitting diode (OLED) with a focus on the role of charge injection, transport and emission layers. Device parameters; luminescence and current density are extracted using Silvaco ATLAS numerical device simulator and validated through the fabricated experimental results with a minor deviation of 3%. Furthermore, a mathematical model is applied to extract other device parameters such as electric field, charge carrier mobility, concentration and current density. Additionally, the multilayered device architecture is critically analysed through cut line methodology to better comprehend the internal device physics in terms of hole‐electron mobility, concentration and their recombination. Subsequently, the performance parameters extracted using analytical model are compared with the results of internal analysis and a close match is observed. These results prove the Poole‐Frenkel mobility‐dependent behaviour in the OLEDs that varies following electric field. Analyses also highlight high electron and hole concentrations in the vicinity of the emission layer as a reason of high luminescence in the multilayered OLED, directly following the Langevin's theory of recombination in organic semiconductors. These analyses highlight the impact of different layers in the OLEDs and thus open up new horizons to further performance improvement in these devices.