Open AccessRole of grooving angle of 14‐nm‐InAs channel quantum well MOSFETs in improving analogue/RF and linearity performance
Author(s) -
Dasgupta Sumedha,
Mondal Chandrima,
Biswas Abhijit
Publication year - 2019
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2019.0064
Subject(s) - transconductance , linearity , amplifier , materials science , total harmonic distortion , optoelectronics , common source , distortion (music) , transistor , operational transconductance amplifier , voltage , electrical engineering , rf power amplifier , operational amplifier , engineering , cmos
The authors investigate and physically analyse the effects of the angle of grooving ( θ ) on various analogues and RF parameters of InAs‐channel quantum well MOSFETs with raised source/drain architecture at a 14‐nm gate length. Moreover, harmonic distortion analysis is performed to examine the linearity and distortion of common source amplifiers built with such transistors. The findings reveal that the device with θ = 20° exhibits significant improvement in transconductance efficiency ( g m /I DS ), output resistance ( r d ), and voltage gain ( A v ) while showing degradation in transconductance ( g m ) compared to the corresponding parameter with θ = 90°. Furthermore, the obtained results manifest that the total harmonic distortion drops to −47 dB for an amplifier built with the device having θ = 90° compared to −22 dB obtained with θ = 20°. Notably, as the angle of grooving increases from 20° to 90°, the gain bandwidth of the amplifier improves by 232% while the peak gain falls by 40%.