Open AccessSuppression of ambipolarity in tunnel‐FETs using gate oxide as parameter: analysis and investigation
Author(s) -
Afzal Ahmad Syed,
Alam Naushad
Publication year - 2020
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2019.0053
Subject(s) - ambipolar diffusion , gate oxide , optoelectronics , materials science , oxide , current (fluid) , field effect transistor , transistor , tunnel field effect transistor , electrical engineering , voltage , engineering , physics , electron , metallurgy , quantum mechanics
In this study, the authors present a double‐gate tunnel field‐effect transistor with dual gate oxide thickness ( henceforth referred to as DOT‐DGTFET) to suppress ambipolar current conduction ( I amb ). Conventional n‐type DGTFET conducts current for negative V GS also and poses a challenge for circuit design. Conduction current in n‐type DGTFET for negative V GS is referred to as ambipolar current ( I amb ). In the proposed DOT‐DGTFET structure, a thin gate oxide of 3 nm is used towards the source–channel junction and a thick gate oxide is used towards the drain–channel junction. Use of thicker gate oxide towards drain–channel junction suppresses I amb significantly while only marginally affecting I ON . Subsequently, the proposed technique for ambipolarity suppression is compared with some of the existing techniques and they observe that DOT‐DGTFET suppresses ambipolarity significantly with minimal effect on the ON state current.