
65 nm sub‐threshold logic standard cell library using quasi‐Schmitt‐trigger design scheme and inverse narrow width effect aware sizing
Author(s) -
Wen Liang,
Nan Longmei,
Zhang Jing,
Meng Chunning,
Lu Yan,
Qi Shiqian,
Lv Jianping,
Zhang Yuejun
Publication year - 2020
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2019.0028
Subject(s) - schmitt trigger , robustness (evolution) , sizing , inverse , logic level , logic gate , computer science , electronic circuit , electronic engineering , control theory (sociology) , voltage , algorithm , electrical engineering , mathematics , engineering , chemistry , artificial intelligence , biochemistry , geometry , control (management) , organic chemistry , gene
In this study, the authors propose a sub‐threshold standard cell library in which the quintessence is a quasi‐Schmitt‐trigger logic design scheme and the inverse narrow width effect aware sizing method. The techniques can improve the I on ‐to‐ I off ratio of the logic cells effectively and provide a significant suppression in leakage current, enhancing the robustness of the circuits. Simulation results show that the NAND3 and NOR3 logics with the new techniques achieve 40–60% and 30–50% reductions in leakage power compared with conventional logic circuits, respectively, when the voltage is scaled down to sub‐threshold region. Again, they also exhibit considerable improvements in process variation immunity and power‐delay product.