Open AccessApproach on electrically doped TFET for suppression of ambipolar and improving RF performance
Author(s) -
Venkata Chandan Bandi,
Nigam Kaushal,
Sharma Dheeraj
Publication year - 2019
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2018.5394
Subject(s) - ambipolar diffusion , electrical engineering , optoelectronics , doping , inversion (geology) , radio frequency , logic gate , materials science , and gate , physics , computer science , engineering , plasma , quantum mechanics , paleontology , structural basin , biology
In this editorial, the effect of dual gate underlap has been implemented on ED‐TFET and it is named as underlap dual metal gate electrically doped tunnel FET (UL‐DMG‐ED‐TFET). The proposed device has been reviewed in terms of device characteristics and analogue/radio‐frequency figure of metrics. By using underlap theory, the authors have resolved the issues of ambipolarity and gate leakage current but somewhat C gd also increases without affecting the DC performances. Moreover, the authors have implemented the dual gate on the proposed device which helps to improve the DC and RF FOMs. Furthermore, the inversion layer and C gd inversion along with parasitic capacitances also deliberate on proposed device (UL‐DMG‐ED‐TFET). Finally, the dual gate‐underlap provides better DC and analogue/RF performances in comparison over conventional structure.