Open AccessAnalysing the TIPSP‐based VOFET through transistor efficiency ( g m /I D )
Author(s) -
Agrawal Kalpana,
Srivastava Ritu,
Rajput S.S.
Publication year - 2019
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2018.5173
Subject(s) - transconductance , ambipolar diffusion , threshold voltage , transistor , materials science , pentacene , conductance , optoelectronics , ion , field effect transistor , voltage , analytical chemistry (journal) , electrical engineering , chemistry , physics , condensed matter physics , plasma , organic chemistry , chromatography , engineering , quantum mechanics
A simple vertical organic field‐effect transistor (VOFET) structure has been fabricated using ambipolar 6, 13‐bis (triisopropylsilyl ethynyl) pentacene (TIPSP) with a channel length ( L ) of 90 nm. This device can operate at –2 V which is much lower than the voltage, reported so far for the organic devices based on TIPSP. The first time, the authors are using transistor efficiency to extract VOFET's parameters. The threshold voltage ( V th ) of the device has been found to vary between 0.18 and 0.38 V with the current on/off ratio ( I on /I off ) of 10 4 . The mobility ( µ ) of the device has been calculated as 0.62 cm 2 /Vs. The sub‐threshold slope, transconductance ( g m ), output conductance ( g d ), and early voltage ( V E ) have been found to be 140 ± 30 mV/decade, 2 µS, 10 −6 S, and 1.3 ± 2 V, respectively.