Open AccessAnalytical model for uniaxial strained Si inversion layer electron effective mobility
Author(s) -
Wang Xiaoyan,
Xu Xiaobo,
Wang Huifeng
Publication year - 2019
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2018.5170
Subject(s) - scattering , inversion (geology) , electron mobility , electron , phonon scattering , condensed matter physics , surface roughness , computational physics , saturation (graph theory) , mobility model , materials science , physics , optics , computer science , quantum mechanics , mathematics , telecommunications , geology , paleontology , structural basin , combinatorics
The electron effective mobility analytical model without empirical parameters is investigated for uniaxial strained Si inversion layer, which can be conveniently applied by device and circuit designers. By one‐dimensional inverse transform for the three‐dimensional (3D) scattering matrix element along the vertical channel direction, three scattering (coulomb scattering, acoustic phonon scattering and intervalley scattering) rate models are researched. Then, the surface roughness scattering rate is taken into account to calculate the 2D inversion layer electron mobility. Based on the models, the simulations have been carried out by Matlab. The simulation results are in accord with the reference data, and the saturation phenomenon is brought to light.