Performance investigation of electrode work‐function engineered hetero‐dielectric buried oxide vertical TFET

For enhancement of I ON and I OFF in tunnel field‐effect transistors (TFETs), it is important to choose novel materials and structures. Here, the authors design a hetero‐dielectric buried oxide vertical TFET (HDB VTFET) and its device characteristics has been investigated. This proposed device reveals the tremendous improvement in terms of sub‐threshold slope, drain‐induced barrier lowering, on‐current and suppresses the ambipolar behaviour up to V gs  = −1.0 V by maintaining very low off‐current. Hence, the concept of hetero‐dielectric buried oxide (BOX) and two metal electrodes having different work‐functions are used here to obtain better results in terms of the current driving capability, steep subthreshold slope (SS) and drain‐induced barrier lowering (DIBL). This device is a promising candidate for low‐power consumption applications.