Open AccessClass‐AB level shifted flipped voltage follower cell using bulk‐driven technique
Author(s) -
Jindal Caffey,
Pandey Rishikesh
Publication year - 2018
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2017.0305
Subject(s) - buffer amplifier , slew rate , swing , cadence , transistor , voltage , electronic engineering , field effect transistor , computer science , electrical engineering , materials science , engineering , mechanical engineering
In this study, a novel level shifted version of flipped voltage follower (FVF) cell, which provides efficient class‐AB operation, is presented. The level shifter is used to increase the swing of the FVF cell. In the proposed circuit, a bulk‐driven metal–oxide–semiconductor field effect transistor is used as a current source to improve the sourcing capability and symmetrical slew rate for the class‐AB operation. The circuit has a high‐input/‐output swing of 1.01 V/0.80 V, wide bandwidth of 751 MHz and low‐output resistance of 107 Ω. The proposed circuit has been designed and simulated in a Cadence Virtuoso Analog Design Environment using BSIM3v3 180 nm complementary metal–oxide–semiconductor technology. The post‐layout simulation results have also been presented to demonstrate the performance of the proposed circuit.