Open AccessAnalytical modelling of work‐function modulated delta‐doped TFET to improve analogue performance
Author(s) -
Panda Subhrasmita,
Dash Sidhartha,
Mishra Guru Prasad
Publication year - 2018
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2017.0135
Subject(s) - work function , doping , subthreshold swing , materials science , transistor , field effect transistor , optoelectronics , tunnel field effect transistor , subthreshold conduction , work (physics) , power (physics) , layer (electronics) , electrical engineering , nanotechnology , physics , engineering , voltage , quantum mechanics , thermodynamics
In this study, an analytical model for linearly modulated work‐function‐based delta‐doped single‐gate tunnel field‐effect transistor (TFET) has been developed to improve the analogue performance. The impact of delta‐doped layer and linearly modulated metal gate on different analogue parameters has been investigated extensively. The insertion of heavily doped delta layer in the source region improves ON current and current switching ratio performance significantly as compared to conventional TFET. Similarly, the presence of spatially work‐function modulated metal gate reduces subthreshold swing and improves I 60 performance. The distance of the delta layer from the source–channel interface is optimised to 3 nm to maximise efficiency. The proposed model exhibits much improved analogue performance as compared to conventional TFET and delta‐doped TFET. Thus, the model can be viewed as one of the potential replacements for metal–oxide–semiconductor field‐effect transistors in ultra‐low‐power applications. However, the precision of present model is corroborated by using the two‐dimensional TCAD Sentaurus simulator.