Open Access3–10 GHz noise‐cancelling CMOS LNA using g m ‐boosting technique
Author(s) -
Lee Muyeon,
Kwon Ickjin
Publication year - 2018
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2017.0094
Subject(s) - low noise amplifier , wideband , noise figure , cmos , impedance matching , common gate , active noise control , electronic engineering , noise (video) , electrical engineering , amplifier , output impedance , electrical impedance , computer science , physics , engineering , channel (broadcasting) , artificial intelligence , image (mathematics)
An ultra‐wideband (UWB) low‐noise amplifier (LNA) using a 0.11 µm CMOS technology is proposed. The common‐gate (CG) input stage for wideband input impedance matching and the common‐source (CS) stage for noise cancelling are applied. In the proposed LNA, the current of the CG input stage can be significantly reduced by applying the g m ‐boosting technique using the noise‐cancelling CS stage without additional amplifier, and the noise performance can be improved at the same power consumption. For low‐power operation, the LNA consumes 2.9 mW and achieves a noise figure (NF) of S 21 between 16.5 and 17.6 dB at S 11 , lower than −12.4 and 3.6–3.7 dB at frequencies of 3–10 GHz. In low‐noise operation, the LNA consumes 8.3 mW, achieving S 11 of less than −10.7 dB, S 21 of 17.5–18.7 dB, and NF of 2.4–2.9 dB.