Open AccessHybrid AlGaN/GaN high‐electron mobility transistor: design and simulation
Author(s) -
Verma Sumit,
Loan Sajad A.,
Alamoud Abdulrahman M.,
Alharbi Abdullah G.
Publication year - 2018
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2017.0025
Subject(s) - high electron mobility transistor , transconductance , optoelectronics , cutoff frequency , transistor , materials science , electrode , fermi gas , oscillation (cell signaling) , electron , electrical engineering , chemistry , physics , voltage , engineering , biochemistry , quantum mechanics
In this study, the authors propose a novel structure of high‐electron mobility transistor (HEMT) with significantly improved performance. The novelty of the proposed HEMT is the realisation of two parallel induced electron layers under the source and drain electrode, one in the form of two‐dimensional (2D) electron gas (2DEG) and the other in the form of charge plasma electron gas (CPEG). The proposed device is a hetrostructure GaN/AlGaN device, therefore, a 2DEG gets created. However, two metal electrodes at the source and drain terminals are used in the proposed device, which induce CPEG in an undoped AlGaN film under the source and drain electrode. Therefore, the proposed HEMT device is hybrid and has a combination of CPEG and the 2DEG. A two‐dimensional (2D) calibrated simulation study of the proposed device has revealed that its hybrid nature has improved its performance significantly in comparison to the conventional HEMT device having 2DEG only. It has been observed that the ON current has enhanced by 115%, transconductance ( g m ) by 168%, cutoff frequency ( f T ) by 71% and maximum oscillation frequency ( f max ) by 65% in comparison to the conventional HEMT.