Open AccessOTFTs compact models: analysis, comparison, and insights
Author(s) -
Fayez Mustafa,
Morsi Khaled Mohamed,
Sabry Mohammed Nabil
Publication year - 2017
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2016.0439
Subject(s) - computer science , variety (cybernetics) , organic semiconductor , transistor , materials science , artificial intelligence , engineering , electrical engineering , optoelectronics , voltage
It is challenging to develop a physically based compact model for an organic thin‐film transistor (OTFT). Moreover, there is still a lack of a universal model that would cover the huge variety of materials and device structures available for state‐of‐the‐art OTFTs. Different models of charge transport phenomenon in organic semiconductors are briefly explained, since such phenomenon constitutes the basis of a physically based compact model of an OTFT. An introduction to the basic principles dictated on compact models suitable for Computer Aided Design (CAD) simulators is stated. Six reported models are presented and analysed with an emphasis on their primary assumptions and applicability aspects. Furthermore, the selected compact models are compared with experimental results provided by a fabricated OTFT. Finally, the authors conclude recommendations for advancing OTFT compact modelling in order to reach a more enhanced model that could characterise most recently reported OTFTs.