Open AccessErratum ‘Benefits of asymmetric underlap dual‐k spacer hybrid fin field‐effect transistor over bulk fin field‐effect transistor’
Publication year - 2016
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2016.0319
Subject(s) - fin , field effect transistor , dual (grammatical number) , field (mathematics) , transistor , materials science , optoelectronics , physics , quantum mechanics , composite material , voltage , art , literature , mathematics , pure mathematics
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