Open AccessImpact of source/drain doping concentration on graphene nanoribbon field effect transistor performance
Author(s) -
Kaur Jasleen,
Kumari Anita
Publication year - 2016
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2016.0094
Subject(s) - doping , transconductance , quantum tunnelling , graphene , materials science , field effect transistor , condensed matter physics , poisson's equation , transistor , optoelectronics , physics , nanotechnology , quantum mechanics , voltage
Graphene nanoribbon field effect transistor is considered as a next‐generation device. In this study, effect on device performance parameters such as on and off state currents, cut‐off frequency, delay and transconductance at different source and drain (S/D) doping concentrations is investigated. It is observed that changing the S/D doping concentrations has an impact on band‐to‐band tunnelling which affects the device performance. This study also reveals that the minimum conductivity point, i.e. Dirac point decreases with increase in doping concentration. The obtained results are based on non‐equilibrium Green's function formalism, along with p z orbital band model. Poisson's equation solver is used to calculate the electrostatic potential. The results obtained show that the device performance greatly depends on the S/D doping concentration.