
Modelling and efficiency optimisation of UHF Dickson rectifiers
Author(s) -
Gharehbaghi Kaveh,
Zorlu Özge,
Koçer Fatih,
Külah Haluk
Publication year - 2016
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2015.0323
Subject(s) - rectifier (neural networks) , ultra high frequency , voltage , electronic engineering , computation , transient (computer programming) , channel (broadcasting) , cmos , transistor , power (physics) , computer science , range (aeronautics) , electrical engineering , control theory (sociology) , engineering , algorithm , physics , stochastic neural network , quantum mechanics , machine learning , recurrent neural network , artificial neural network , aerospace engineering , operating system , control (management) , artificial intelligence
This paper presents a new time‐efficient modelling approach for UHF Dickson rectifiers. Due to the very low computation time, the approach can provide a quick and effective alternative to the standard transient simulations. The presented approach results in better estimation of the generated DC voltage and power conversion efficiency compared with the similar works in the literature. For the first time, an accurate mathematical relationship, including the non‐zero reverse current, is expressed for finding the open load voltage of the Dickson rectifier while covering the broad range of RF amplitudes. The model uses the relation between the peak forward current and the load current to develop an input‐to‐output formula. Unlike the previous works, the channel length modulation is taken into consideration for the first time making the proposed model ideal for UHF Dickson rectifiers implemented with submicron CMOS transistors. Moreover, the proposed model takes secondary effects, such as the body effect and short‐channel effects into account resulting in a more accurate estimation of the generated output DC voltage. Using the presented approach, a Dickson rectifier working at 900 MHz is implemented in a 0.18 µm CMOS process. Good agreement between simulation results, predicted results, and measurement results is observed.