Open AccessAnalysis and design of class E power amplifier considering MOSFET parasitic input and output capacitances
Author(s) -
Hayati Mohsen,
Roshani Sobhan,
Kazimierczuk Marian K.,
Sekiya Hiroo
Publication year - 2016
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2015.0271
Subject(s) - mosfet , amplifier , electrical engineering , transistor , power mosfet , duty cycle , voltage , electronic engineering , voltage source , engineering , cmos
In this study, design theory and analysis for the class E power amplifier (PA), considering the metal oxide semiconductor field effect transistor (MOSFET) parasitic input and output capacitances, are proposed. The input resistance and capacitances cause non‐ideal input voltage at gate terminal, which affect the specifications of the class E PA. In the proposed study, non‐linear drain‐to‐source, linear gate‐to‐drain and linear gate‐to‐source MOSFET parasitic capacitances are considered, while zero voltage and zero derivative switching conditions are achieved. Moreover, the input resistance and the value of the input voltage are taken into account in the design theory. According to the obtained results, the duty cycle of the MOSFET depends on the MOSFET threshold voltage, input voltage, input series resistance, and some other parameters, which will be explained in this study. A design example is finally given to describe the design procedure at 1 MHz operating frequency along with the experimental result. The circuit simulation is also performed using PSpice software. The measured results showed quantitative agreements with simulation and theory results.