Open AccessWideband dual‐mode complementary metal–oxide–semiconductor receiver
Author(s) -
Guan Rui,
Jin Jing,
Pan Wenjie,
Chen Dongpo,
Zhou Jianjun
Publication year - 2016
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2015.0022
Subject(s) - transimpedance amplifier , cmos , noise figure , low noise amplifier , linearity , wideband , amplifier , electrical engineering , noise (video) , materials science , optoelectronics , electronic engineering , engineering , computer science , rf power amplifier , artificial intelligence , image (mathematics)
A dual‐mode complementary metal–oxide–semiconductor (CMOS) receiver operating from 1 to 2 GHz is presented. The proposed receiver employs a switchable low‐noise amplifier (LNA) and two separated down‐conversion paths to realise dual‐mode operation. For receiving weak signals without large blockers, the receiver works in the high‐gain mode which adopts the common gate (CG)–common source (CS) LNA and the active‐mixer‐based down‐conversion path to achieve high gain and low noise figure (NF). In the case of large in‐band blockers, the receiver works in the high linearity mode, which uses the LNA as a low‐noise transimpedance amplifier followed by a 25% duty‐cycle current‐driving passive mixer and a transimpedance amplifier based on current buffer to obtain high in‐band linearity. Implemented in a 0.18 μm CMOS technology, this receiver achieves 4.9 dB NF and a voltage gain range of 29.4–92.6 dB in high‐gain mode, whereas +0.9 dBm in‐band input‐referred third‐order interception and a voltage gain range of 15.8–20.1 dB in high linearity mode.