Open AccessLow power complementary metal‐oxide semiconductor class‐G audio amplifier with gradual power supply switching
Author(s) -
Bhamidipati Bharadvaj,
ColliMenchi Adrian I.,
SánchezSinencio Edgar
Publication year - 2015
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2014.0263
Subject(s) - amplifier , electrical engineering , cmos , biasing , linear amplifier , audio power amplifier , electronic engineering , direct coupled amplifier , power (physics) , rf power amplifier , total harmonic distortion , computer science , operational amplifier , engineering , voltage , physics , quantum mechanics
The architecture, design and implementation of a low power complementary metal‐oxide semiconductor (CMOS) class‐G audio amplifier with gradual power‐supply switching (GPSS) are presented. The proposed class‐G amplifier output stage strategically uses the parallel connection of a class‐AB output stage operating from smaller supplies ( V DDL / V SSL ), and a class‐C output stage (with crossover from V SSL to V DDL ) operating from higher supplies ( V DDH / V SSH ). GPSS is achieved using an efficient biasing scheme with level shifters. Moreover, the proposed biasing scheme in conjunction with negative feedback enables low distortion during the power‐supply transition. Experimentally, the class‐G amplifier prototype achieves a −82.5 dB THD + N, a peak load power of 50 mW and a quiescent power consumption of 350 μW. The proposed class‐G amplifier was implemented in a standard CMOS 90 nm technology and occupies an active silicon area of 0.08 mm 2 .