Open AccessWide‐band high‐efficiency Ku‐band power amplifier
Author(s) -
Yousefi Alireza,
Medi Ali
Publication year - 2014
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2014.0134
Subject(s) - amplifier , high electron mobility transistor , power bandwidth , power added efficiency , rf power amplifier , dbm , electrical engineering , transistor , linear amplifier , bandwidth (computing) , power (physics) , d band , direct coupled amplifier , materials science , optoelectronics , engineering , physics , operational amplifier , telecommunications , optics , voltage , quantum mechanics , raman spectroscopy
A 37 dBm power amplifier (PA) is designed on a 0.25 µm optical T‐gate pseudomorphic high electron mobility transistor (pHEMT) technology. The design of this two‐stage PA along with a step‐by‐step design procedure is presented in this paper. This methodology can be used for design of PA in different technologies and frequencies. The PA delivers 5 W output power over the frequency band of 13–19 GHz. It shows average power‐added efficiency of 37% and large signal gain of 15 dB in measurements which is consistent with simulation results. The output power and efficiency of the realised amplifier reach maximums of 37.6 dBm and 45%, respectively. Considering output power, bandwidth, chip area and efficiency, this PA exhibits competitive performance compared to the reported PAs.