Open AccessRF parameter extraction of underlap DG MOSFETs: a look up table based approach
Author(s) -
Kundu Atanu,
Dutta Arka,
Koley Kalyan,
Niyogi Saptak,
Sarkar Chandan K.
Publication year - 2014
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2014.0086
Subject(s) - extraction (chemistry) , table (database) , mosfet , computer science , physics , electronic engineering , reliability engineering , electrical engineering , engineering , data mining , voltage , chemistry , chromatography , transistor
In this study, a look up table (LUT) is developed to extract the intrinsic RF parameters of underlap DG MOSFET (UDG‐MOSFET) including the non‐quasi‐static (NQS) effect. The LUT‐based approach proposed; can accurately extract complex RF parameters of UDG‐MOSFET under different bias conditions, necessary for RF circuit simulations by an interpolation algorithm. The RF parameters including intrinsic gate to drain capacitance ( C gd ), gate to source capacitance ( C gs ), gate to drain resistance ( R gd ), gate to source resistance ( R gs ), gate to source transconductance ( g m ), drain to source transconductance ( g ds ), transport delay ( τ m ), capacitance because of DIBL ( C sdx ) and inductance because of transport delay ( L sd ), cut‐off frequency ( f T ) and maximum frequency of oscillation ( f max ) are extracted using LUT approach. Parameters extracted using LUT are compared with simulated data, considering the NQS effect, and are found in good agreement. For RF circuit applications a low‐noise amplifier is designed, with the UDG‐MOSFET, operating at a tuned frequency of 10 GHz.