RF parameter extraction of underlap DG MOSFETs: a look up table based approach

In this study, a look up table (LUT) is developed to extract the intrinsic RF parameters of underlap DG MOSFET (UDG‐MOSFET) including the non‐quasi‐static (NQS) effect. The LUT‐based approach proposed; can accurately extract complex RF parameters of UDG‐MOSFET under different bias conditions, necessary for RF circuit simulations by an interpolation algorithm. The RF parameters including intrinsic gate to drain capacitance ( C gd ), gate to source capacitance ( C gs ), gate to drain resistance ( R gd ), gate to source resistance ( R gs ), gate to source transconductance ( g m ), drain to source transconductance ( g ds ), transport delay ( τ m ), capacitance because of DIBL ( C sdx ) and inductance because of transport delay ( L sd ), cut‐off frequency ( f T ) and maximum frequency of oscillation ( f max ) are extracted using LUT approach. Parameters extracted using LUT are compared with simulated data, considering the NQS effect, and are found in good agreement. For RF circuit applications a low‐noise amplifier is designed, with the UDG‐MOSFET, operating at a tuned frequency of 10 GHz.