Open AccessDoping stability and opto‐electronic performance of chemical vapour deposited graphene on transparent flexible substrates
Author(s) -
Kang Moon H.,
Milne William I.,
Cole Matthew T.
Publication year - 2015
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2014.0074
Subject(s) - graphene , doping , materials science , chemical vapor deposition , nanotechnology , optoelectronics , chemical stability , stability (learning theory) , chemical engineering , computer science , engineering , machine learning
The primary barrier to wider commercial adoption of graphene lies in reducing the sheet resistance of the transferred material without compromising its high broad‐band optical transparency, ideally through the use of novel transfer techniques and doping strategies. Here, chemical vapour deposited graphene was uniformly transferred to polymer supports by thermal and ultraviolet (UV) approaches and the time‐dependent evolution of the opto‐electronic performance was assessed following exposure to three kinds of common dopants. Doping with FeCl 3 and SnCl 2 showed minor, and notably time unstable, enhancement in the σ opt / σ dc figure of merit, while AuCl 3 ‐doping markedly reduced the sheet resistance by 91.5% to 0.29 kΩ/sq for thermally transferred samples and by 34.4% to 0.62 kΩ/sq for UV‐transferred samples, offering a means of realising viable transparent flexible conductors that near the indium tin oxide benchmark.