Open AccessOrigin of 1/ f noise in graphene produced for large‐scale applications in electronics
Author(s) -
Kochat Vidya,
Sahoo Anindita,
Pal Atindra Nath,
Eashwer Sneha,
Ramalingam Gopalakrishnan,
Sampathkumar Arjun,
Tero Ryugu,
Viet Thu Tran,
Kaushal Sanjeev,
Okada Hiroshi,
Sandhu Adarsh,
Raghavan Srinivasan,
Ghosh Arindam
Publication year - 2015
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2014.0069
Subject(s) - graphene , oxide , materials science , flicker noise , crystallite , chemical vapor deposition , noise (video) , grain boundary , crystal (programming language) , hydrazine (antidepressant) , nanotechnology , chemical engineering , optoelectronics , composite material , chemistry , metallurgy , microstructure , computer science , amplifier , cmos , chromatography , artificial intelligence , noise figure , engineering , image (mathematics) , programming language
The authors report a detailed investigation of the flicker noise (1/ f noise) in graphene films obtained from chemical vapour deposition (CVD) and chemical reduction of graphene oxide. The authors find that in the case of polycrystalline graphene films grown by CVD, the grain boundaries and other structural defects are the dominant source of noise by acting as charged trap centres resulting in huge increase in noise as compared with that of exfoliated graphene. A study of the kinetics of defects in hydrazine‐reduced graphene oxide (RGO) films as a function of the extent of reduction showed that for longer hydrazine treatment time strong localised crystal defects are introduced in RGO, whereas the RGO with shorter hydrazine treatment showed the presence of large number of mobile defects leading to higher noise amplitude.