Open AccessLow‐jitter, high‐linearity current‐controlled complementary metal oxide semiconductor relaxation oscillator with optimised floating capacitors
Author(s) -
Zhu Jing,
Zhang Yunwu,
Sun Weifeng,
Yi Yangbo
Publication year - 2014
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2013.0426
Subject(s) - capacitor , jitter , materials science , current (fluid) , linearity , relaxation oscillator , optoelectronics , electrical engineering , semiconductor , oxide , filter capacitor , voltage , voltage controlled oscillator , engineering , metallurgy
A new complementary metal oxide semiconductor (CMOS) relaxation oscillator featuring with high linearity and low‐jitter is presented in this study. The high linearity between the frequency and control current is achieved by adopting the floating capacitor and the independent charged and discharged loops. The low‐jitter performance is gained because of that the voltage across the floating capacitor is larger than the conventional oscillator. The proposed circuit is compatible with standard CMOS process and one test‐chip with typical frequency of 6.66 MHz was implemented in the 0.5 μm (bipolar–CMOS–double‐diffused metaloxide semiconductor (DMOS)) (BCD) process. The measured results show that <0.86% non‐linearity in the current–frequency transfer function from 1 to 6.66 MHz without trimming. The cycle‐to‐cycle jitter was <112 ppm.