Open AccessParameters influencing the maximum controllable current in gate commutated thyristors
Author(s) -
Lophitis Neophytos,
Antoniou Marina,
Udrea Florin,
Nistor Iulian,
Arnold Martin,
Wikström Tobias,
Vobecky Jan
Publication year - 2014
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
ISSN - 1751-8598
DOI - 10.1049/iet-cds.2013.0217
Subject(s) - thyristor , wafer , base (topology) , current (fluid) , electronic engineering , computer science , materials science , electrical engineering , optoelectronics , engineering , voltage , mathematics , mathematical analysis
The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this study the authors evaluate the relative importance of the shallow p‐base thickness, its peak concentration, the depth of the p‐base and the buffer peak concentration.