Open AccessSwitching ruggedness and surge‐current capability of diodes using the self‐adjusting p emitter efficiency diode concept
Author(s) -
Basler Thomas,
Pfaffenlehner Manfred,
Felsl Hans Peter,
Niedernostheide FranzJosef,
Pfirsch Frank,
Schulze HansJoachim,
Baburske Roman,
Lutz Josef
Publication year - 2014
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2013.0216
Subject(s) - diode , anode , materials science , cathode , common emitter , optoelectronics , surge , current (fluid) , step recovery diode , electrical engineering , schottky diode , electrode , physics , engineering , quantum mechanics
The surge‐current ruggedness of free‐wheeling diodes can be improved by implementing the self‐adjusting p emitter efficiency diode concept (SPEED). Simulations indicate that the switching ruggedness is reduced because of the occurrence of cathode‐side filaments during reverse‐recovery. Experiments confirm the weak switching performance of such a diode in comparison to a conventional diode. By implementing the controlled injection of backside holes concept cathode‐side filaments can be suppressed. However, this measure is not sufficient to regain the switching ruggedness of a conventional diode. It is also necessary to fully embed the p + ‐areas of the SPEED anode in the low‐doped p‐type area to avoid high electrical field strengths at the p + p‐junction and pinning of anode‐side filaments. However, anode‐side adjustments for improving the switching ruggedness can reduce the benefit of the SPEED concept regarding the surge‐current capability.