Open AccessParasitic elements modelling in thermoelectric modules
Author(s) -
Cernaianu Mihail Octavian,
Gontean Aurel
Publication year - 2013
Publication title -
iet circuits, devices and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 49
eISSN - 1751-8598
pISSN - 1751-858X
DOI - 10.1049/iet-cds.2012.0351
Subject(s) - thermoelectric effect , inductance , seebeck coefficient , parasitic capacitance , parasitic element , materials science , thermoelectric generator , thermoelectric materials , thermal conductivity , capacitance , semiconductor , electrical resistivity and conductivity , optoelectronics , electronic engineering , mechanical engineering , engineering physics , electrical engineering , composite material , engineering , physics , thermodynamics , voltage , electrode , quantum mechanics
This study introduces an experimental method for determining the parasitic reactive components that appear in a thermoelectric module (TEM). In most cases, a TEM is referred to by taking into account only the constant values of the internal electrical resistance, Seebeck coefficient and thermal conductivity. The current research is focused on determining the parasitic reactive elements, inductance and capacitance that appear in a TEM. These values are linked to the semiconductor geometry and manufacturing process. The experimental results will be used afterwards to build an accurate thermoelectric device model suitable for designing and simulating TEM‐based applications.