Parasitic elements modelling in thermoelectric modules | Zendy

Cernaianu Mihail Octavian | Zendy; Gontean Aurel | Zendy

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Parasitic elements modelling in thermoelectric modules

Author(s) -

Cernaianu Mihail Octavian,

Gontean Aurel

Publication year - 2013

Publication title -

iet circuits, devices and systems

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.251

H-Index - 49

eISSN - 1751-8598

pISSN - 1751-858X

DOI - 10.1049/iet-cds.2012.0351

Subject(s) - thermoelectric effect , inductance , parasitic element , parasitic capacitance , seebeck coefficient , materials science , thermal conductivity , thermoelectric generator , thermoelectric materials , capacitance , electronic engineering , optoelectronics , electrical resistivity and conductivity , mechanical engineering , engineering physics , electrical engineering , engineering , composite material , physics , thermodynamics , voltage , electrode , quantum mechanics

This study introduces an experimental method for determining the parasitic reactive components that appear in a thermoelectric module (TEM). In most cases, a TEM is referred to by taking into account only the constant values of the internal electrical resistance, Seebeck coefficient and thermal conductivity. The current research is focused on determining the parasitic reactive elements, inductance and capacitance that appear in a TEM. These values are linked to the semiconductor geometry and manufacturing process. The experimental results will be used afterwards to build an accurate thermoelectric device model suitable for designing and simulating TEM‐based applications.

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