Open AccessMitigation measures of the electric field in the medium‐voltage power module: Effect of voltage types and recommendations for designers
Author(s) -
Huang Zhizhao,
Chen Cai,
Kang Yong,
MunkNielsen Stig,
Uhrenfeldt Christian
Publication year - 2021
Publication title -
high voltage
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.732
H-Index - 20
ISSN - 2397-7264
DOI - 10.1049/hve2.12104
Subject(s) - electric field , voltage , silicon carbide , field strength , electrical engineering , materials science , field (mathematics) , high voltage , optoelectronics , engineering physics , mechanical engineering , engineering , composite material , physics , magnetic field , mathematics , quantum mechanics , pure mathematics
In the medium‐voltage silicon carbide device power module, the higher voltage level will induce higher electric field stress in critical internal points such as the edge of the conductor on the direct bonded copper (DBC) substrate. This can lead to partial discharge and subsequently accelerated ageing of the insulating medium in the module. Therefore, it is important to reduce the high electric field strength. Herein, the related technical methods of electric field control are reviewed and compared by combining the ease of implementation in real power module and the field control effect. In addition, systematic explanations of the electric field drift and influencing factors of the electric field strength under different voltage types within different module structures are presented. Finally, for half‐bridge power modules with different substrates structures, suggestions on how to implement non‐linear field‐dependent materials to reduce the electric field strength are given.