Open AccessHeterojunction bipolar transistors with a planar‐type extended base as a hydrogen‐sensitive sensor
Author(s) -
Huang ChiaHua,
Tan ShihWei,
Lo Hao,
Lo Chieh,
Lour WenShiung
Publication year - 2022
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12614
Subject(s) - heterojunction bipolar transistor , materials science , optoelectronics , bipolar junction transistor , planar , heterojunction , common emitter , transistor , heterostructure emitter bipolar transistor , hydrogen , base (topology) , electrical engineering , voltage , chemistry , computer science , engineering , mathematical analysis , computer graphics (images) , organic chemistry , mathematics
A hydrogen sensing transistor fabricated by a heterojunction bipolar transistor (HBT) with an extended base (EB) formed by a metal–semiconductor–metal (MSM) hydrogen sensor is reported. The power consumption in stand‐by mode is smaller than 2 µW. Common‐emitter characteristics show that the sensing base (collector) current gains at 25°C in 0.01%, 0.1%, and 1% H 2 /N 2 are as high as 75 (512), 134, (977), and 233 (2.89 × 10 3 ), respectively. Low‐power consumption and high‐sensitive gains are indicative that our HBT together with planar‐type MSM sensor is very promising for applications to hydrogen sensing transistors using one voltage source.