Heterojunction bipolar transistors with a planar‐type extended base as a hydrogen‐sensitive sensor | Zendy

Huang ChiaHua | Zendy; Tan ShihWei | Zendy; Lo Hao | Zendy; Lo Chieh | Zendy; Lour WenShiung | Zendy

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Heterojunction bipolar transistors with a planar‐type extended base as a hydrogen‐sensitive sensor

Author(s) -

Huang ChiaHua,

Tan ShihWei,

Lo Hao,

Lo Chieh,

Lour WenShiung

Publication year - 2022

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/ell2.12614

Subject(s) - bipolar junction transistor , planar , heterojunction , base (topology) , optoelectronics , heterojunction bipolar transistor , materials science , hydrogen , transistor , heterostructure emitter bipolar transistor , electrical engineering , electronic engineering , computer science , engineering , physics , voltage , mathematics , quantum mechanics , mathematical analysis , computer graphics (images)

A hydrogen sensing transistor fabricated by a heterojunction bipolar transistor (HBT) with an extended base (EB) formed by a metal–semiconductor–metal (MSM) hydrogen sensor is reported. The power consumption in stand‐by mode is smaller than 2 µW. Common‐emitter characteristics show that the sensing base (collector) current gains at 25°C in 0.01%, 0.1%, and 1% H 2 /N 2 are as high as 75 (512), 134, (977), and 233 (2.89 × 10 3 ), respectively. Low‐power consumption and high‐sensitive gains are indicative that our HBT together with planar‐type MSM sensor is very promising for applications to hydrogen sensing transistors using one voltage source.

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