Open AccessSubstrate integrated waveguide based class‐F power amplifier
Author(s) -
Yang Fei,
Yu Hongxi,
Li Jun,
Xu KaiDa,
Zhang Anxue,
Jin Zhonghe
Publication year - 2022
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12338
Subject(s) - amplifier , harmonics , impedance matching , matching (statistics) , electronic engineering , harmonic , waveguide , rf power amplifier , radio frequency , electrical impedance , power (physics) , topology (electrical circuits) , frequency band , electrical engineering , computer science , engineering , materials science , physics , optoelectronics , antenna (radio) , acoustics , voltage , mathematics , statistics , cmos , quantum mechanics
This work outlines the design, implementation, and experimental results of a Class‐F power amplifier (PA) with a novel output matching topology by utilizing substrate integrated waveguide (SIW). The design methodology is first proposed with one highly integrated SIW matching structure. The impedances at fundamental, second harmonic and third harmonic frequencies are analysed to explain good impedance matching for the PA as well as the isolation mechanism of the direct current (DC) and radio frequency (RF). For demonstration, an S‐band 10‐W Class‐F PA is fabricated and tested. The simulation and measurement results agree very well with each other, which verifies the proposed technology of SIW output matching. To the authors’ knowledge, this is the first time to use a highly integrated SIW matching in Class‐F PA, which simplifies the output matching for third‐order harmonics and DC/RF isolation structures.