Open AccessSputter‐grown GeTe/Sb 2 Te 3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation
Author(s) -
Jin SooMin,
Kang ShinYoung,
Kim HeaJee,
Lee JuYoung,
Nam InHo,
Shim TaeHun,
Song YunHeub,
Park JeaGun
Publication year - 2022
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12337
Subject(s) - phase change memory , materials science , phase (matter) , superlattice , optoelectronics , memory cell , sputtering , electrode , voltage , condensed matter physics , thin film , nanotechnology , electrical engineering , chemistry , layer (electronics) , transistor , physics , organic chemistry , engineering
The multi‐level feature of GeTe/Sb 2 Te 3 interfacial phase change memory was achieved by applying a designed voltage‐based pulse. It stably demonstrated five multi‐level states without interference for 90 cycles by varying the pulse width. GeTe/Sb 2 Te 3 interfacial phase change memory demonstrated retention time of > 1.0 × 10 3 s, presenting the significantly low drift coefficient ( ν ) of < 0.009, indicating no resistivity drift due to the structure relaxation of glass. In addition, the reset energy consumption of GeTe/Sb 2 Te 3 interfacial phase change memory was reduced by more than 85% compared to conventional Ge 2 Sb 2 Te 5 phase change memory at each bottom electrode contact size. Multi‐level‐cell operation mechanism and gradual increase in conductance value of GeTe/Sb 2 Te 3 interfacial phase change memory was explained by a partial resistance transition model where phase transition occurred partially in all layers. The result of the GeTe/Sb 2 Te 3 interfacial phase change memory performance is expected to bring great advantages to the next‐generation storage class memory industry that requires low energy and high density.