Open AccessFabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i ‐line stepper
Author(s) -
Ando Yuji,
Makisako Ryutaro,
Takahashi Hidemasa,
Wakejima Akio,
Suda Jun
Publication year - 2021
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12303
Subject(s) - high electron mobility transistor , materials science , optoelectronics , fabrication , transistor , stepper , resist , wafer , electron beam lithography , lithography , gallium nitride , substrate (aquarium) , photolithography , voltage , electrical engineering , nanotechnology , medicine , alternative medicine , pathology , layer (electronics) , engineering , oceanography , geology
This article reports a high throughput 150‐nm‐gate AlGaN/GaN high electron mobility transistor (HEMT) process using i ‐line stepper lithography and a thermal reflow technique. Optimizing thermal reflow conditions, fabrication of a 150‐nm gate structure was successfully realized with the initial resist opening of 0.7 μm. AlGaN/GaN field‐plated HEMTs were fabricated on a semi‐insulating SiC substrate by using this process. In spite of unoptimized structures, fabricated 150‐nm gate devices exhibited the maximum drain current of 0.65 A/mm and the gate‐drain breakdown voltage exceeding 200 V. Based on cold HEMT extraction measurements, the average gate length of 187 nm and the standard deviation of 30 nm were obtained on a quarter 4‐in. wafer.